スポンサーリンク
Memory Research And Development Division Hynix Semiconductor Inc. | 論文
- Analytical electron microscopy study of nanometre-scate oxide formed in contact-hole-bottom Si surfaces
- Thermal Stability and Electrical Properties of SrBi2Ta2-xNbxO9/IrOx Capacitors with Pt Top Electrode
- Fabrication of Highly Dense Ru Thin Films by High-Temperature Metal-Organic Chemical Vapor Deposition with NH3 Gas as Ru Oxidation Suppressing Agent
- Effects of High-Temperature Metal-Organic Chemical Vapor Deposition of Pb(Zr,Ti)O3 Thin Films on Structural Stabilities of Hybrid Pt/IrO2/Ir Stack and Single-Layer Ir Bottom Electrodes
- Physical and Electrical Characteristics of Physical Vapor-Deposited Tungsten for Bit Line Process
- Properties of Ru Thin Films Fabricated on TiN by Metal-Organic Chemical Vapor Deposition
- Oxidation Characteristics of TiN Film as a Barrier Metal for Bottom-Electrode Ru Film Fabricated from Tris-(2,4-octanedionato)ruthenium