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Materials Research Center Tdk Corporation | 論文
- Radical- and Ion-Induced Reactions on Plasma-Deposited Silicon Surfaces
- Growth Kinetics of Silicon Thin Film Studied by Hydrogen Radical and Ion Irradiation : Beam Induced Physics and Chemistry
- Diffusion Barrier Effect of Ultra-Thin Photo-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
- Impurity Diffusion Barrier Effect of Ultra-Thin Plasma-Nitrided a-Si:H Overlayer on SnO_2/Glass Substrate
- Memory Operation of Silicon Quantum-Dot Floating-GateMetal-Oxide-Semiconductor Field-Effect Transistors : Semiconductors
- Luminescence Study of Thermally-Oxidized Porous Si under Subgap or Overgap Excitation
- Gap-State Distributions in Hydrogenated Amorphous Silicon-Germanium Evaluated Using Capacitance-Voltage Method
- Luminescence from Thermally Oxidized Porous Silicon
- Nitrogen Incorporation in a-Ge:H Produced in High-Hydrogen-Dilution Plasma
- High Quality a-SiGe:H Alloys Prepared by Nanometer Deposition/H_2 Plasma Annealing Method
- High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits
- Single-Chip Integration of Light-Emitting Diode, Waveguide and Micrormirrors
- Fabrication and Evaluation of Three-Dimensional Optically Coupled Common Memory
- Evaluation of Plasma-Induced Damage by Medium-Energy Ion Scattering
- Electron Tunneling through Ultrathin Gate Oxide Formed on Hydrogen-Terminated Si(100) Surfaces
- Atomic Scale Flatness of Chemically Cleaned Silicon Surfaces Studied by Infrared Attenuated-Total-Reflection Spectroscopy
- BF^+_2 Ion Implantation into Very-Low-Temperature Si Wafer
- Chemical Stability of HF-Treated Si(111) Surfaces
- The Role of Fluorine Termination in the Chemical Stability of HF-Treated Si Surfaces
- Chemical Bonding Features of Fluorine and Boron in BF^+_2 -Ion-Implanted Si