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Materials Research Center Tdk Corporation | 論文
- In-Depth Profiling of Suboxide Compositions in the SiO_2/Si Interface by Angle-Resolved X-Ray Photoelectron Spectroscopy
- Analytical Modelling of Quasi-Breakdown of Ultrathin Gate Oxides under Constant Current Stressing
- Quantitative Analysis of Tunneling Current through Ultrathin Gate Oxides
- Phonon Interaction in the Luminescence of Porous Silicon
- Reabsorption of Visible Luminescence in Porous Si
- Visible Photoluminescence from Porous Silicon
- Structural Inhomogeneity in Hydrogenated Amorphous Silicon in Relation to Photoelectric Properties and Defect Density
- Deposition of Hydrogenated Amorphous Silicon under Intermittent Substrate Bias
- In Situ Monitoring of Silicon Surfaces During Reactive Ion Etching
- Correlation between Light-Induced Degradation and Structural Inhomogeneities in Hydrogenated Amorphous Silicon Prepared under High-Rate Deposition Conditions
- Calculation of Subband States in a Metal-Oxide-Semiconductor Inversion Layer with a Realistic Potential Profile
- Analytical Modeling of Metal Oxide Semiconductor Inversion-Layer Capacitance
- Quasibound States of Electric Field-Induced Quantum Wells in Silicon Subsurface
- Quantitative Evaluation of Dopant Loss in 5-10 keV As Ion Implantation for Low-Resistive, Ultrashallow Source/Drain Formation
- Medium-Energy Ion Spectroscopy Using Ion Implanter
- Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
- Atomic Layer Controlled Digital Etching of Silicon : Etching and Deposition Technology
- Atomic Layer Controlled Digital Etching of Silicon
- Transmiccion electron microscopy study of a semiconducting SrTiO_3 ceramic condenser
- Low-Temperature-Fireable Dielectric Material Pb(Fe_W_)O_3-(Pb,Ca)(Fe_Nb_)O_3 for Microwave Use