スポンサーリンク
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University | 論文
- Low Temperature Activation of Mg-Doped GaN in O_2 Ambient : Semiconductors
- Vertical High Quality Mirrorlike Facet of GaN-Based Device by Reactive Ion Etching
- Temperature-Dependent Characteristics of the Inverted Delta-Doped V-Shaped InGaP/In_xGa_/GaAs Pseudomorphic Transistors
- Investigation of a Step-Doped-Channel Negative-Differential-Resistance Transistor
- Impact of An Indium Oxide/Indium-Tin Oxide Mixed Structure for GaN-Based Light-Emitting Diodes
- An Improved In_Ga_P/GaAs Double Heterostructure-Emitter Bipolar Transistor Using Emitter Edge-Thinning Technique
- Application of Doping-Superlattice Collector Structure for GaAs Bipolar Transistor
- A Novel Dual-Metal Gate Integration Process for Sub-1nm EOT HfO_2 CMOS Devices
- Direct Growth of High-Quality InP Layers on GaAs Substrates at Low Temperature by Metalorganic Vapor Phase Epitaxy
- Direct Growth of High-Quality In_xGa_As Strained Layers on Misoriented GaAs Substrates Grown by Metalorganic Chemical Vapor Deposition
- Doping Effect of PtCu/Co and PtAl/Co Multilayers
- On the Hardening of Friction Stir Processed Mg-AZ31 Based Composites with 5-20% Nano-ZrO_2 and Nano-SiO_2 Particles
- Colorimetric Analysis for Liquid Crystal Projection TV : Using 3D Look-up Table and Interpolations
- Highly-Stable Thermal Characteristics of a High Electron-Mobility Transistor with a Novel In_Ga_As_N_(Sb) Dilute Channel
- Inductively Coupled Plasma Mesa Etched InGaN/GaN Light Emitting Diodes Using Cl_2/BCl_3/Ar Plasma
- Memory Effect of Device Based on a Conjugated Donor-Acceptor Copolymer
- Very High Selective Etching of GaAs/Al0.2Ga0.8As for Gate Recess Process to Pseudomorphic High Electron Mobility Transistors (PHEMT) Applications Using Citric Buffer Solution
- S-Band 38dBm Power Amplifier Using PHEMT and FR4 Substrate
- Direct Growth of High-Quality InP Layers on GaAs Substrates at Low Temperature by Metalorganic Vapor Phase Epitaxy