Direct Growth of High-Quality InP Layers on GaAs Substrates at Low Temperature by Metalorganic Vapor Phase Epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
Direct growth of metamorphic structure of high quality InP layers on GaAs substrates by metalorganic vapor phase epitaxy is presented. The quality of the top InP layer is strongly affected by the growth temperatures, group III and V partial pressure ratios and peripheral environment parameters control. A growth window that has successfully suppressed the numerous dislocations and rough surface as a result of the large lattice mismatch between InP and GaAs is obtained. Only 400 nm thick InP buffer layer compared with that of previous reports of 2 μm thick is qualified to obtain low dislocations and defects, high crystal quality, and uniform and specular surface morphologies. The material quality measured by photoluminescence is even better than that of InP substrates. In addition, the 2.8 nm surface roughness is lower than that of previous reports of 11.1 nm.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-08-15
著者
-
Yarn Kao-feng
Optoelectronic Semiconductor Center Department Of Electrical Engineering
-
Wang Yeong-her
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
-
LIN Chien-Lien
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University
-
Lin Yu-lu
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University
-
Lin Yu-Lu
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan 701, Republic of China
-
Liao Chin-I
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan 701, Republic of China
-
Liao Chih-I
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan 701, Republic of China
-
Lin Chien-Lien
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan 701, Republic of China
-
Wang Yeong-Her
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan 701, Republic of China
関連論文
- Molecular Beam Epitaxy Grown GaAs Bipolar-Unipolar Transition Negative Differential Resistance Power Transistor
- Direct Growth of High-Quality InP Layers on GaAs Substrates at Low Temperature by Metalorganic Vapor Phase Epitaxy
- Direct Growth of High-Quality In_xGa_As Strained Layers on Misoriented GaAs Substrates Grown by Metalorganic Chemical Vapor Deposition
- A Novel Microwave Microstrip Surface Acoustic Wave Filter with Gigahertz Band Low-Loss Wide Bandwidth for Broad Spectrum Communication System
- Effects of Annealing on Tantalum Pentoxide Films in N_2 and N_2O Gas Environments : Surfaces, Interfaces, and Films
- Very High Selective Etching of GaAs/Al0.2Ga0.8As for Gate Recess Process to Pseudomorphic High Electron Mobility Transistors (PHEMT) Applications Using Citric Buffer Solution
- High Capacitance Density in a Ta_2O_5 Folded Capacitor Chip
- TiN Enhancement of Output Performance for Light-Emitting Diodes under High Injection Current
- Liquid Phase Chemical Enhanced Oxidation on AlGaAs and Its Application
- Direct Growth of High-Quality InP Layers on GaAs Substrates at Low Temperature by Metalorganic Vapor Phase Epitaxy
- Effects of Annealing on Tantalum Pentoxide Films in N2 and N2O Gas Environments