Direct Growth of High-Quality InP Layers on GaAs Substrates at Low Temperature by Metalorganic Vapor Phase Epitaxy
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-08-15
著者
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Yarn Kao-feng
Optoelectronic Semiconductor Center Department Of Electrical Engineering
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Wang Yeong-her
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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Lin C‐l
National Chung‐hsing Univ. Taichung Twn
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LIAO Chin-I
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University
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LIN Chien-Lien
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University
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LIN Yu-Lu
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University
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