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Institute for materials Research, Tohoku University | 論文
- Cyclotron Resonance in PrSb
- Cyclotron Resonance in CeSb(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Determination of Cyclotron Effective Masses on LaSb
- Cyclotron Resonance of LaSb : Condensed Matter: Electronic Properties, etc.
- Cyclotron Resonance of GdAs : Condensed Matter: Electronic Properties, etc.
- Antiferromagnetic Resonance and Magnetic Structure of GdAs : Condensed Matter: Electronic Properties, etc.
- dHvA Effect and Magnetic Resonance of GdAs
- 133 液体炭化水素の蒸発現象の分子動力学的研究
- 1921 液体炭化水素の蒸発現象の分子動力学的研究
- High-Magnetic-Field X-ray Absorption Spectroscopy of Field-Induced Valence Transition in EuNi_2(Si_Ge_x)_2(Condensed matter : electronic structure and electrical, magnetic, and optical properties)
- Partially Depleted SOI Technology with Body-Tied Hybrid Trench Isolation for High-Speed System-On-a-Chip Application(Special Issue on Integrated Systems with New Concepts)
- Direct Measurement of Transient Drain Currents in Partially-Depleted SOI N-Channel MOSFETs Using a Nuclear Microprobe for Highly Reliable Device Designs
- A Sub 1-V L-Band Low Noise Amplifier SOI CMOS(Special Section on Analog Circuit Techniques and Related Topics)
- A CAD-Compatible SOI-CMOS Gate Array Using 0.35 μm Partially-Depleted Transistors (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
- Analyses of the Radiation-Caused Characteristics Change in SOI MOSFETs Using Field Shield Isolation
- Analysis and Optimization of Floating Body Cell Operation for High-Speed SOI-DRAM (Special Issue on Ultra-High-Speed IC and LSI Technology)
- The Influence of the Buried Oxide Defects on the Gate Oxide Reliability and Drain Leakage Currents of the Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors
- Suppression of Parasitic MOSFETs at LOCOS Edge Region in Partially Depleted SOI MOSFETs
- Analysis of the Delay Distributions of 0.5μm SOI LSIs (Special Issue on SOI Devices and Their Process Technologies)
- Features of SOI DRAM's and their Potential for Low-Voltage and/or Giga-Bit Scale DRAM's (Special Issue on ULSI Memory Technology)