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Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit | 論文
- A Novel Triple δ-Doped SiGe Heterostructure Field-Effect Transistor
- Transparent TiN Electrodes in GaN Metal-Semiconductor-Metal Ultraviolet Photodetectors(Semiconductors)
- On the Carrier Concentration and Hall Mobility in GaN Epilayers : Semiconductors
- High Reliable Nitride Based LEDs with Internal ESD Protection
- Nitride-based flip-chip LEDs with transparent ohmic contacts and reflective mirrors
- Nitride-based p-i-n Photodetectors with ITO p-contacts
- Nitride based Power Chip with ITO p-Contact and Al back-side Reflector
- Effects of High-Resistivity, Low-Temperature Layer in Transient Capacitance Measurements of GaAs n-i-p Structures
- Improvement in Characteristics of InGaAs/GaAs Quantum-Dot PIN Photodetectors with Antireflection Photonic Crystals
- AlGaN MSM Photodetectors with SiN/GaN double buffer layers
- GaN Ultraviolet MSM Photodetectors by capping a Low-Temperature AlN Layer
- GaN Metal-Semiconductor-Metal Photodetectors with an un-activated Mg-doped GaN Cap Layer
- Material and Electrical Characterization of Nickel Germanide for p-channel Germanium Schottky Source/Drain Transistors
- Low Temperature Activation of Mg-Doped GaN in O_2 Ambient : Semiconductors
- Improved Performance of 2, 3-Dibutoxy-1, 4-Phenylene Vinylene Based Polymer Light-Emitting Diodes by Thermal Annealing
- ZnMgSSe Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrodes : Semiconductors
- Investigation of Impact Ionization in Strained-Si nMOSFETs
- Effects of Trimethylgallium Flow Rate on $a$-Plane GaN Growth on $r$-Plane Sapphire during One-Sidewall-Seeded Epitaxial Lateral Overgrowth
- AlGaN Ultraviolet Metal-Semiconductor-Metal Photodetectors with Low-Temperature-Grown Cap Layers
- High Brightness and Crack-free InGaN/GaN Light Emitting Diode With AlGaN Buffer Layer On Si (111)