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Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit | 論文
- Practical Passive Filter Synthesis Using Genetic Programming(CAD, Analog Circuit and Device Technologies)
- The Low-Temperature Characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs Broken-Gap Interband Tunneling Structures
- The Low-Temperature Characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs Broken-Gap Interband Tunneling Structure
- The novel method to improve electrical characteristics of p-type GaN by using Ni catalysis
- Nitride-based light emitting diode and photodetector dual function Devices with InGaN/GaN multiple quantum well structures
- High Brightness Green Light Emitting Diode with Charge Asymmetric Resonance Tunneling Structure
- Tolerance Design of Passive Filter Circuits Using Genetic Programming(Electronic Circuits)
- Investigation of GaN-Based Light-Emitting Diodes Grown on Patterned Sapphire Substrates by Contact-Transferred and Mask-Embedded Lithography
- Bistable Resistive Switching Characteristics of Poly(2-hydroxyethyl methacrylate) Thin Film Memory Devices
- Investigation of Impact Ionization in Strained-Si n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
- AlGaN Metal–Semiconductor–Metal Photodetectors with Low-Temperature AlN Cap Layer and Recessed Electrodes
- IGTC-20 Evaluation of Unsteady Blade Loading Signals during Stall and its Inception in Centrifugal Compressors(Session A-7 CENTRIFUGAL COMPRESSOR II)
- Investigation of Nonvolatile Memory Effect of Organic Thin-Film Transistors with Triple Dielectric Layers
- Vertical High Quality Mirrorlike Facet of GaN-Based Device by Reactive Ion Etching
- Investigation of Nonvolatile Memory Effect of Organic Thin-Film Transistors with Triple Dielectric Layers
- AlGaN Ultraviolet Metal–Semiconductor–Metal Photodetectors with Low-Temperature-Grown Cap Layers
- Study of Enhanced Impact Ionization in Strained-SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
- Characterization of Oxide Traps in 28 nm n-Type Metal--Oxide--Semiconductor Field-Effect Transistors with Different Uniaxial Tensile Stresses Utilizing Random Telegraph Noise
- Suppression of Nonradiation Recombination by Selected Si Doping in AlGaN Barriers for Ultraviolet Light-Emitting Diodes
- Characterization of Oxide Traps in 28 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors with Different Uniaxial Tensile Stresses Utilizing Random Telegraph Noise (Special Issue : Solid State Devices and Materials)