スポンサーリンク
Institute Of Materials Science And Center For Tara Tsukuba Advanced Research Alliance University Of | 論文
- The Effect of Surface Oxides on the Creation of Point Defects in GaAs Studied by Slow Positron Beam
- Quantitative Analysis of the Wide Range of Concentrations of Boron in Silicon by SIMS
- The Low Temperature Reaction of Radiation Defects in GaAs Introduced by γ-Ray at 33 K
- Universal Passivation Effect of (NH_4)_2S_x Treatment on the Surface of III-V Compound Semiconductors
- Epitaxial Growth of Al on (NH_4)_2S_x-Treated GaAs
- AES Observation on the Photochemically Washed Surface of GaAs
- Studies on an (NH_4)_2S_x-Treated GaAs Surface Using AES, LEELS and RHEED
- A Model to Explain the Effective Passivation of the GaAs Surface by (NH_4)_2S_x Treatment : Semiconductors and Semiconductor Devices
- Metal-Dependent Schottky Barrier Height with the (NH_4)_2S_x-Treated GaAs : Semiconductors and Semiconductor Devices
- The Effect of (NH_4)_2S Treatment on the Interface Characteristics of GaAs MIS Structures : Semiconductors and Semiconductors Devices
- Pd-on-GaAs Schottky Contact : Its Barrier Height and Response to Hydrogen
- Electron Traps due to Defect-Impurity Complexes Induced by the Deformation of Epitaxial GaAs Grown on Si-Doped Substrate
- Distribution of the Main Electron Trap EL2 in Undoped LEC GaAs
- Comparison of Deep Energy Levels in HB and LEC Undoped Bulk GaAs : LATE NEWS
- Phase Transition between c(4 × 2) and p(2 × 2) Structures of the Si(100) Surface at 6 K Caused by the Fluctuation of Phase Defects on Dimer Rows due to Dimer Flip-Flop Motion
- Relation between Cr-Level and Main Electron Trap (EL2)in Boat-Grown Bulk GaAs
- Surface Structure of InAs (001) Treated with (NH_4)_2S_x Solution
- Analysis of Thermally Stimulated Current Spectroscopy in Semiinsulating GaAs. I. Initialization
- Plasma CVD of Amorphous AlN from Metalorganic Al Source and Properties of the Deposited Films
- Passivation Properties of Plasma CVD AlN Films for GaAs