スポンサーリンク
Institute Of Materials Science And Center For Tara Tsukuba Advanced Research Alliance University Of | 論文
- Disordering of Si-Doped AlAs/GaAs Superlattice by Annealing
- Photo-Annealing of Fatigue in Photoluminescence of Hydrogenated Amorphous Silicon
- Apparent Recovery Effect of Hydrogenated Pd-on-GaAs (n-Type) Schottky Interface by Forward Current at Low Temperature
- Effects of Carrier Gas and Substrate on the Electrical Properties of Epitaxial GaAs Grown by the Single Flat Temperature Zone Chloride VPE Method
- Chloride VPE of Al_xGa_As by the Hydrogen Reduction Method Using a Metal Al Source : Semiconductors and Semiconductor Devices
- Improved Thermally Stimulated Current Spectroscopy to Characterize Levels in Semi-Insulating GaAs
- A Simple Method to Determine the Capture Cross Section of Deep Levels in GaAs by Thermally Stimulated Current