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IMEC | 論文
- Combination of high-resolution RBS and angle-resolved XPS: accurate depth profiling of chemical states (Extended abstracts book of the International Workshop for Surface Analysis and Standardization '09 (iSAS-09))
- 24pWK-6 電圧印加によるGaAs(100)/Fe/Au/Feの交換結合変化(24pWK 薄膜・人工格子磁性,表面・界面磁性,領域3(磁性,磁気共鳴))
- Architectural Exploration and Design of Time-Interleaved SAR Arrays for Low-Power and High Speed A/D Converters
- Application of a Nano-Mechanical Sensor to Monitor Stress in Copper Damascene Interconnects
- Atomic Force Microscopy and Infrared Spectroscopy Studies of Hydrogen Baked Si Surfaces
- Reliable Two/Dimensional Carrier Profiling by Scanning Spreading Resistance Microscopy on InP/Based Devices With Fast Quantification Procedure
- High Resolution Structure Imaging of Octahedral Void Defects in As-Grown Czochralski Silicon
- Architectural Exploration and Design of Time-Interleaved SAR Arrays for Low-Power and High Speed A/D Converters
- 27a-YJ-8 MnAs:GaAsグラニュラー薄膜における負の磁気抵抗効果
- Analysis of Ultra-Thin HfO_2/SiON/Si(001) : Comparison of Three Different Techniques
- Fast Consecutive Zero and One bits Detection Circuits for a 1.25 Gbit/s Burst Mode Laser Driver(Communication Devices/Circuits)
- A Burst-Mode Laser Transmitter with Fast Digital Power Control for a 155 Mb/s Upstream PON(The IEICE Transactions on Communications, Vol.E86-B, No.5)
- A Burst-Mode Laser Transmitter with Fast Digital Power Control for a 155 Mb/s Upstream PON ( Recent Progress in Optoelectronics and Communications)
- Performance Degradation Induced by Fringing Field-Induced Barrier Lowering and Parasitic Charge in Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors with High-κ Dielectrics
- Polysilicon Encapsulated LOCOS for Deep Submicron CMOS Lateral Isolation
- H_2O_2 Decomposition and Its Impact on Silicon Surface Roughening and Gate Oxide Integrity
- Current Mode Circuits for Fast and Accurate Optical Level Monitoring with Wide Dynamic Range(Devices/Circuits for Communications)
- Charge Trapping in SiO_x/ZrO_2 and SiO_x/TiO_2 Gate Dielectric Stacks
- Critical Parameters for Obtaining Low Particle Densities on a Si Surface in an HF-Last Process
- Gate Voltage Dependence of Reliability for Ultra-Thin Oxides