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Hitachi Ltd. Tsuchiura‐shi Jpn | 論文
- Strain Imaging of Lead-Zirconate-Titanate Thin Film by Tunneling Acoustic Microscopy
- Highly Oxidation-Resistant TiN Barrier Layers for Ferroelectric Capacitors
- Hydrogen-related Degradation and Recovery Phenomena in Pb(Zr,Ti)O_3 Capacitors with a Platinum Electrode
- Highly Oxidation-Resistant TiN Barrier Layers for Ferroelectric Capacitors
- Effects of Post-Annealing Temperatures and Ambient Atmospheres on the Electrical Properties of Ultrathin (Ba, Sr) TiO_3 Capacitors
- Improved Resistance Against the Reductive Ambient Annealing of Ferroelectric Pb(Zr, Ti)O_3 Thin Film Capacitors with IrO_2 Top Electrode(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- IrO_2/Pb(Zr_xTi_)O_3(PZT)/Pt Ferroelectric Thin-Film Capacitors Resistant to Hydrogen-Annealing Damage
- Stress Analysis of Transistor Structures Considering the Internal Stress of Thin Films
- Oxygen Diffusion in Pt Botton Electrodes of Ferroelectric Capacitors
- Stress Analysis in Silicon Substrates during Thermal Oxidation
- Residual Stress in Silicon Substrate with Shallow Trenches on Surface after Local Thermal Oxidation
- Residual Stress Measurement in Silicon Substrates after Thermal Oxidation
- Thermal Stability of Pt Bottom Electrodes for Ferroelectric Capacitors