スポンサーリンク
Hitachi Ltd. Ibaraki Jpn | 論文
- The study of AI-L_23 ELNES with resolution-enhancement software and first-principles calculation
- Spatially-resolved EELS analysis of multilayer using EFTEM and STEM
- Edge Roughness Study of Chemically Amplified Resist in Low-Energy Electron-Beam Lithography Using Computer Simulation
- Output Characteristics in an C_2H_5OH-N_2 Gas Mixture of a Gas Polarographic Oxygen Sensor Using a Zirconia Electrolyte
- Gas Polarographic Oxygen Sensor Using the Pores of the Pt Cathode as a Gas Diffusion Barrier
- Self-Excited Vibration During Slippage of Parallel Cardan Drives for Electric Railcars : Vibration, Control Engineering, Engineering for Industry
- Crystallinity Improvement by Synchrotron Radiation Irradiation in Low-Temperature Si Epitaxial Growth Using Disilane : Beam Induced Physics and Chemistry
- Crystallinity Improvement by Synchrotron Radiation Irradiation in Low-Temperature Si Epitaxial Growth Using Disilane
- Effects of Back-Channel Etching on the Performance of a-Si:H Thin-Film Transistors
- A Novel Plasma Etching Tool with RF-Biased Faraday-Shield Technology : Chamber Surface Reaction Control in the Etching of Nonvolatile Materials
- Ultrastructure of Outermost Layer of Cell Wall in Candida albicans Observed by Rapid-freezing Technique
- Lithography Simulator for Electon Beam/Deep UV Intra-Level Mix & Match
- Charge-reducing Effect of Chemically Amplified Resist in Electron-Beam Lithography
- Fabrication of Semi-Insulating GaN Wafers by Hydride Vapor Phase Epitaxy of Fe-Doped Thick GaN Layers Using GaAs Starting Substrates
- Analysis of Plasma Chemical Reactions in Dry Etching of Silicon Dioxide
- Gas Polarographic Hydrogen Sensor Using a Zirconia Electrolyte
- Characteristics of Epitaxial Layers Grown by a New RF-Induction Heated Hot-Wall-Type Reactor for High-Volume Epitaxy
- Optimization of a High-Performance Chemically Amplified Positive Resist for Electron-Beam Lithography
- A Study on the Path of an Upper-Body Support Arm Used for Assisting Standing-Up and Sitting-Down Motion
- Low-Temperature Formation of the PtSi Layer by Codeposition of Pt and Si in a Molecular Beam Epitaxy System