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Hitachi Ltd. Ibaraki Jpn | 論文
- A New Experimental Geometry of Elastic Recoil Detection Analysis (ERDA)
- Critical Acoustic Anomaly of a Binary Mixture of Nitroethane and Cyclohexane with Acetone Impurity in the Frequency Range of 0.3-3 MHz : Physical Acoustics
- Ultrasonic Absorption in a Binary Mixture of Nitrobenzene/n-Hexane over the Frequency Range of 0.2 MHz-3 MHz : Physical Acoustics
- Anisotropic Thermal Diffusivity and Conductivity of YBCO(123) and YBCO(211) Mixed Crystals. II
- Anisotropic Thermal Diffusivity and Conductivity of YBCO(123) and YBCO(211) Mixed Crystals. I
- Simultaneous Measurement of Thermal Diffusivity and Conductivity Applied to Bi-2223 Ceramic Superconductors
- Diffuse Phase Transition and Anisotropic Evolution of Nanodomains in Nd_Sr_MnO_3(Condensed matter : electronic structure and electrical, magnetic, and optical properties)
- Aggregation of Monocrystalline β-FeSi_2 by Annealing and by Si Overlayer Growth
- 4-Monolayer-Height Layer-by-Layer Growth and Increase of the Critical Thickness of Ge Heteroepitaxy on Boron-Preadsorbed Si(111) Surface
- Stability of Si(111)√×√R30°-B Surface in Air
- Comparison of Planar to Columnar Transformation of PtSi Layers on Si(001) and Si(111) Substrates in the Si Capping Layer Growth Process
- Growth Temperature Dependence of Boron Surface Segregation and Electrical Properties of Boron Delta-Doped Structures Grown by Si Molecular Beam Epitaxy
- Influence of Boron Adsorption over Si(111) Surface on Si Molecular Beam Epitaxial Growth Studied by Reflection High-Energy Electron Diffraction
- Temperature Dependence of Boron Adsorption during HBO_2 Irradiation on Si(111) Surface Evaluated by Reflection High-Energy Electron Diffraction
- Formation of β-FeSi_2 Layers on Si(001) Substrates
- Accurate Determination of the Urbach Energy of a-Si:H Thin Films by Correction for the Interference Effect
- In Situ Optical Measurement Using Optical Fibers for a-Si:H Ultra-Thin Films: Theoretical and Numerical Analysis
- Absorption Coefficient Measurements of MgZnCdSe II-VI Compounds on InP Substrates and Quantum Confined Stark Effect in ZnCdSe/MgZnCdSe Multiple Quantum Wells
- Absorption Coefficient Measurements of MgZnCdSe II-VI Compounds on InP Substrates and Quantum Confined Stark Effect in ZnCdSe/MgZnCdSe Multiple Quantum Wells
- Development of dedicated STEM with high stability