スポンサーリンク
Graduate School of Advanced Sciences of Matter, Hiroshima University | 論文
- Raman Scattering and Infrared Absorption Investigation of Hydrogen Configuration State in Mechanically Milled Graphite under H_2 Gas Atmosphere (Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)
- Composite Materials based on Light Elements for Hydrogen Storage
- Effects of Locally Targeted Heavy-ion and Laser Microbeam on Root Hydrotropism in Arabidopsis thaliana
- Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots(Nanomaterials and Quantum-Effect Devices, Fundamental and Application of Advanced Semiconductor Devices)
- Quantitative Analysis of Oxide Voltage and Field Dependence of Time-Dependent Dielectric Soft Breakdown and Hard Breakdown in Ultrathin Gate Oxides
- Memory Operation of Silicon Quantum-Dot Floating-GateMetal-Oxide-Semiconductor Field-Effect Transistors : Semiconductors
- Analysis of Tunnel Current through Ultrathin Gate Oxides
- Luminescence Study of Thermally-Oxidized Porous Si under Subgap or Overgap Excitation
- Gap-State Distributions in Hydrogenated Amorphous Silicon-Germanium Evaluated Using Capacitance-Voltage Method
- Scanning Tunneling Microscopy Observation on the Atomic Structures of Step Edges and Etch Pits on a NH_4F-Treated Si(111) Surface
- High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits
- Fabrication and Evaluation of Three-Dimensional Optically Coupled Common Memory
- Modeling of Soft Breakdown in Ultrathin Gate Oxides
- Analytical Modelling of Quasi-Breakdown of Ultrathin Gate Oxides under Constant Current Stressing
- Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
- Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
- Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV)
- Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV)
- Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories(Session4A: Nonvolatile Memory)
- Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO_2 Structure as Evaluated by AFM/KFM