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Graduate School of Advanced Sciences of Matter, Hiroshima University | 論文
- Angle-Resolved Inverse Photoemission Spectra of Layered 1T-VSe_2,1T-TiS_2,IT-TaS_2,2H-NbSe_2 and 2H-TaSe_2
- Structural Inhomogeneity in Hydrogenated Amorphous Silicon in Relation to Photoelectric Properties and Defect Density
- Deposition of Hydrogenated Amorphous Silicon under Intermittent Substrate Bias
- In Situ Monitoring of Silicon Surfaces During Reactive Ion Etching
- Correlation between Light-Induced Degradation and Structural Inhomogeneities in Hydrogenated Amorphous Silicon Prepared under High-Rate Deposition Conditions
- Calculation of Subband States in a Metal-Oxide-Semiconductor Inversion Layer with a Realistic Potential Profile
- Analytical Modeling of Metal Oxide Semiconductor Inversion-Layer Capacitance
- Quasibound States of Electric Field-Induced Quantum Wells in Silicon Subsurface
- Synthesis and Characterization of an Ultramicroporous Cesium Hydrogen Salt of 12-Tungstophosphoric Acid, Cs_H_PW_O_
- Resonant Tunneling through SiO_2/Si Quantum Dot/SiO_2 Double Barrier Structures
- Fine SiO_2 Pattern Generation by Electron Beam Direct Writing onto Polysiloxene-Based Thin Films and Its Application to Etch Mask
- Low Temperature Specific Heat and Electrical Resistivity in Orthorhombic YBa_2Cu_3O_ and Tetragonal YBa_2Cu_3O_
- Pulse Modulation Techniques for Nonlinear Dynamical Systems and a CMOS Chaos Circuit with Arbitrary 1-D Maps(New System Paradigms for Integrated Electronics)
- New Non-Volatile Analog Memory Circuits Using PWM Methods (Special Issue on Integrated Electronics and New System Paradigms)
- Study of Stress from Discontinuous SiN Liner for Fully-Silicided Gate Process
- Guiding Principle of Energy Level Controllability of Silicon Dangling Bond in HfSiON
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors(Session 9A Silicon Devices VI,AWAD2006)
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors(Session 9A Silicon Devices VI)
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors