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Graduate School of Advanced Science of Matter, Hiroshima University | 論文
- Capability of Electrothermal Simulation for Automotive Power Application Using Novel Laterally Diffused Metal Oxide Semiconductor Model
- Phase Alignments between MHD Modes Followed by Minor Collapses on TST-2
- Dynamic-Carrier-Distribution-Based Compact Modeling of p--i--n Diode Reverse Recovery Effects
- Unified Reaction--Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect
- Highly Adhesive Electroless Cu Layer Formation Using an Ultra Thin Ionized Cluster Beam (ICB)-Pd Catalytic Layer for Sub-100 nm Cu Interconnections
- A Self-Consistent Non-Quasi-Static MOSFET Model for Circuit Simulation Based on Transient Carrier Response
- Surface-Potential-Based Metal–Oxide–Silicon-Varactor Model for RF Applications
- Suppressed Short-Channel Effect of Double-Gate Metal Oxide Semiconductor Field-Effect Transistor and Its Modeling
- Frequency Dependence of Measured Metal Oxide Semiconductor Field-Effect Transistor Distortion Characteristic
- Modeling of Subthreshold Swing and Analysis of Short-Channel Effects in Double-Gate Metal Oxide Semiconductor Field-Effect Transistors
- Plasma Current Sustainment by RF Power in ECH Start-up Plasma in the TST-2 Spherical Tokamak
- Compact Modeling of Floating-Base Effect in Injection-Enhanced Insulated-Gate Bipolar Transistor Based on Potential Modification by Accumulated Charge (Special Issue : Solid State Devices and Materials)
- Complete Surface-Potential-Based Fully-Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model for Circuit Simulation
- High-Electric-Field Electron Transport at Silicon/Silicon-Dioxide Interface Inversion Layer
- Effect of Additives on Hole Filling Characteristics of Electroless Copper Plating