スポンサーリンク
Graduate School of Advanced Science of Matter, Hiroshima University | 論文
- Optical Spectra of the Kondo Semiconductor YbB_
- Evaluation of Edge Electron Temperature Fluctuations Using a Conditional Technique on TST-2
- Effect of Additives on Hole Filling Characteristics of Electroless Copper Plating
- Highly Adhesive Electroless Cu Layer Formation Using an Ultra Thin Ionized Cluster Beam (ICB)-Pd Catalytic Layer for Sub-100 nm Cu Interconnections
- Influence of Surface Oxide of Sputtered TaN on Displacement Plating of Cu
- Study of a Dielectric Constant Due to Electronic Polarization Using a Semiempirical Molecular Orbital Method I : Semiconductors
- Electron-Tunneling Studies of the Cubic Kondo Semiconductors
- R-matrix Theory of Quantum Transport in Nanoscale Electronic Devices
- Coarse-Grain 3D Quantum Simulations of Nanoscale MOSFET
- A Self-Consistent Non-Quasi-Static MOSFET Model for Circuit Simulation Based on Transient Carrier Response
- High-Electric-Field Electron Transport at Silicon/Silicon-Dioxide Interface Inversion Layer
- Circuit-Simulation Model of C_ Changes in Small-Size MOSFETs Due to High Channel-Field Gradients(the IEEE International Conference on SISPAD '02)
- Circuit Simulation Models for Coming MOSFET Generations(Special Section of Selected Papers from the 14th Workshop on Circuits and Systems in Karuizawa)
- Shot noise modeling in metal-oxide-semiconductor field effect transistors under sub-threshold Condition
- 100 nm-MOSFET Model for Circuit Simulation : Challenges and Solutions(Devices and Circuits for Next Generation Multi-Media Communication Systems)
- Carrier Transport Model for Lateral p-i-n Photodiode in High-Frequency Operation
- Development of a Thomson Scattering System in the TST-2 Spherical Tokamak
- MOSFET Harmonic Distortion up to the Cutoff Frequency : Measurement and Theoretical Analysis
- 100 nm-MOSFET Model for Circuit Simulation : Challenges and Solutions
- Universal Relationship between Substrate Current and History Effect in Silicon-on-Insulator Metal--Oxide--Semiconductor Field-Effect Transistors