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Fujitsu Laboratory Ltd. | 論文
- A 9-bit 100-MS/s 1.46-mW Tri-Level SAR ADC in 65nm CMOS
- Far-Infrared Study of Bi-Sr-Ca-Cu-O Thin Films on MgO Substrates
- Split Capacitor DAC Mismatch Calibration in Successive Approximation ADC
- 18-GHz Clock Distribution Using a Coupled VCO Array(Analog and Communications,Low-Power, High-Speed LSIs and Related Technologies)
- Defects in Ion Implanted Hg_Cd_Te Probed by Monoenergetic Positron Beams
- Defects and Their Annealing Properties in B^+-Implanted Hg_Cd_Te Studied by Positron Annihilation
- A Study of Native Defects in Ag-doped HgCdTe by Positron Annihilation
- Electric Field Effect in LaTiO_3/SrTiO_3 Heterostructure
- Electric Field Effect in LaTiO_3/SrTiO_3 Heterostructure
- Pt/PZT/n-SrTiO_3 Ferroelectric Memory Diode
- Find the 'Best' Solution from Multiple Analog Topologies via Pareto-Optimality
- Observations of Island Structures at the Initial Growth Stage of PbZr_xTi_O_3 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
- IrO_2/Pb(Zr,Ti)O_3/Pt Capacitor Degradation with D_2 Gas at Elevated Temperature
- Annealing Study of Bi-Sr-Ca-Cu-O Superconducting Thin Film
- Growth of Epitaxial CeO_2 Films on (1012) Sapphire by Halide Source Plasma Enhanced Chemical Vapor Deposition
- EXAFS Study of Cation Sites in In-thiospinel Compound FeIn_2S_4
- A Static Random Access Memory Cell Using a Double-Emitter Resonant-Tunneling Hot Electron Transistor for Gigabit-Plus Memory Applications
- Schottky Barrier Height of Al n-In_Ga_As and Nb/n-In_Ga_As Diodes
- Design and Application of Ferroelectric Memory Based Nonvolatile SRAM(New System Paradigms for Integrated Electronics)
- Circuits for CMOS High-Speed I/O in Sub-100nm Technologies (Interface and Interconnect Techniques, VLSI Design Technology in the Sub-100nm Era)