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Fujitsu Laboratories | 論文
- Analyses of 2D Electron Transport at a GaAs/AlGaAs Interface : B-5: GaAs IC
- An Improved Technique for Fabricating High Quantum Efficiency Ridge Waveguide AlGaAs/GaAs Quantum Well Lasers
- Study of the Etching Reaction by Atomic Chlorine Using Molecular Beam Scattering
- Chemical States of Bromine Atoms on SiO_2 Surface after HBr Reactive Ion Etching : Analysis of Thin Oxide
- Mechanism of High Selectivity and Impurity Effects in HBr RIE: In-Situ Surface Analysis
- The Crystal Growth of Homogeneous Hg_Cd_xTe by the Bridgman Method
- Hall Effect in Hg_Cd_xTe
- Anomalous Hall Effect in Hg_Cd_xTe
- Power Dependence on Repetition Time of the Q-Switched CO_2 Laser
- Longitudinal Media with > 1000 KFCI Percolation Densities
- Current Injection Effects in a Nb/AlO_x-Al/Nb/n-InSb Triode
- 9 ps Gate Delay Josephson OR Gate with Modified Variable Threshold Logic
- Current Switching Observed in Planar Gunn-Effect Device with Thin Active Layer
- Time Dependent Potential in Planar Gunn-Effect Device
- Evaluation of Deep Levels in Semiconductors Using Field Effect Transconductance
- An Improved Method of Determining Deep Impurity Levels and Profiles in Semiconductors
- The Effect of Heat Treatment on Al-GaAs Schottky Barriers
- Evaluation of Photoemitted Current from SiO_2 Film on Silicon During Synchrotron Radiation Irradiation
- Synchrotron Radiation-Assisted Silicon Film Growth by Irradiation Parallel to the Substrate
- Surface Discharge Color AC-Plasma Display Panel