スポンサーリンク
Fujitsu Laboratories | 論文
- The Frequency Response of Germanium Avalanche Photodiodes
- Heterojunction Effect on Spectral and Frequency Responses in InP/InGaAsP/InGaAs APD : B-3: NOVEL DEVICES
- Alloy Fluctuation Effect on Electronic Transition Properties of DX Center Observed with Modified Deep Level Transient Spectroscopy
- Two Step Photoconductive Decay of Ge:Hg Detectors
- The Degeneracy of Hg Level in Ge
- Avalanche Built-Up Time of the Germanium Avalanche Photodiode
- Precipitation of Li in Si
- Two Step Photoconductive Decay of P-InSb by CO_2 Laser Light
- Network Restoration Algorithm for Multimedia Communication Services and Its Performance Characteristics
- 100-keV Focused Ion Beam System for Field Ion Source : Lithography Technology
- Analysis of Capacitance of Planar AlGaAs/GaAs pin Photodiode
- Slow Degradation Mechanism of GaAlAs Light-Emitting Diodes : B-3: LASER
- Measurement of Grey Zone of a Josephson SFQ Memory Cell
- Exciton-Transition Energies and Band Structure of (GaP)_n(GaAs)_n/GaAs Atomic-Layer Superlattices
- Facet Degradation of AlGaInP Visible Semiconductor Lasers with Facet Passivation
- CCD with Meander Channel
- Thermal Stability of Au-Sn/Near Noble Metal Barrier Metallization Systems
- SIMS and DLTS Measurements on Fe-Doped InP Epitaxial Layers Grown by MOCVD : Semiconductors and Semiconductor Devices
- Optical Characteristics of Reflection-Type Surface-Discharge AC Plasma Display Panels
- On Parallel Hash-Join Processing with Skewed Data