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Fujitsu Laboratories | 論文
- 5.6 ps Gate Delay All Refractory Josephson OR Gate with Modified Variable Threshold Logic
- Two-Dimensional 4 × 4 Optical Fiber Array Applied to a Monolithic LED Array
- Monolithic 1×4 Array of Uniform Radiance AlGaAs-GaAs LED's Grown by Molecular Beam Epitaxy
- Reflectance Spectroscopy of (GaP)_n(GaAs)_n/GaAs Atomic Layer Superlattices
- Annealing Study of Bi-Sr-Ca-Cu-O Superconducting Thin Film
- Efficient Method to Measure IMD of Power Amplifier with Simplified Phase Determination Procedure to Clarify Memory Effect Origins
- Magnetophonon Effect and Energy Band Parameters of InP
- Magnetophonon Resonance in n-InP : Physical Acoustics
- Providing Scalable Support for Multiple QoS Guarantees : Architecture and Mechanisms
- Emission Mechanism in In_Ga_As/InP Quantum-Well Heterostructures Grown by Chloride Vapor-Phase Epitaxy
- Atomic Step Structure on Vicnal H/Si(111) Surface Formed by Hot Water Immersion
- An Adaptive Impedance Matching System for Mobile Communication Terminals (移動通信ワークショップ)
- An Adaptive Impedance Matching System for Mobile Communication Terminals (移動通信ワークショップ)
- An Adaptive Impedance Matching System for Mobile Communication Terminals (移動通信ワークショップ)
- An Adaptive Impedance Matching System for Mobile Communication Terminals (移動通信ワークショップ)
- Study on Chlorine Adsorbed Silicon Surface Using Soft-X-Ray Photoemission Spectroscopy
- Transmission Electron Microscope Observation of Mechanically Damaged InGaAsP/InP Double-Heterostructure Light-Emitting Diode
- Boron Diffusion in SiO_2 Involving High-Concentration Effects
- Boron Diffusion in SiO_2 Involving High-Concentration Effects
- Post-Exposure-Bake Simulation Model with Constant Acid Loss of Chemically Amplified Resist