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Epitech Technology Corporation | 論文
- Fabrication of Oxide-Confined Collector-Up Heterojunction Bipolar Transistors
- High Reliable Nitride Based LEDs with Internal ESD Protection
- Nitride-based flip-chip LEDs with transparent ohmic contacts and reflective mirrors
- Nitride-based p-i-n Photodetectors with ITO p-contacts
- Nitride based Power Chip with ITO p-Contact and Al back-side Reflector
- Noise Analysis of AlGaN/GaN MOS-HFETs with Photochemical-Vapor Deposition SiO_2 Layer
- Simulation and Fabrication of InGaP/Al_Ga_As/GaAs Oxide-Confined
- InGaN/GaN Light Emitting Diodes with a Lateral Current Blocking Structure
- Improvement of AlGaInP Multiple-Quantum-Well Light-Emitting Diodes by Modification of Ohmic Contact Layer
- AlGaInP Light Emitting Diode with a Modulation-Doped Superlattice
- Temperature Dependence of Barrier Height and Energy Bandgap in Au/n-GaSb Schottky Diode
- Reduction of Ohmic Contact Resistance on n-GaN by Surface Treatment Using Cl_2 Inductively Coupled Plasma Following Laser Lift-Off
- High Brightness and Crack-free InGaN/GaN Light Emitting Diode With AlGaN Buffer Layer On Si (111)
- InGaN/GaN Light Emitting Diodes with a Lateral Current Blocking Structure
- Improvement of AlGaInP Multiple-Quantum-Well Light-Emitting Diodes by Modification of Ohmic Contact Layer
- Simulation and Fabrication of InGaP/Al0.98Ga0.02As/GaAs Oxide-Confined Collector-Up Heterojunction Bipolar Transistors
- Fabrication of Oxide-Confined Collector-Up Heterojunction Bipolar Transistors
- Reduction of Ohmic Contact Resistance on $n$-GaN by Surface Treatment Using Cl2 Inductively Coupled Plasma Following Laser Lift-Off
- Oxide Confined Collector-Up Heterojunction Bipolar Transistors