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Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute | 論文
- Single-Mode Vertical-Cavity Surface-Emitting Lasers with a Deep-Etched Half-Ring-Shaped Holey Structure
- The Observation of Anomalous Optical Berthelot-type Behaviors in Quaternary AlInGaN Semiconductor Heterosystems
- TiO_2 nanocrystal prepared by ALD system at elevated temperature
- Microstructural evolution of MIM capacitor prepared by ALD system at elevated temperature
- HfO_2/HfAlO/HfO_2 Nanolaminate Charge Trapping Layers for High-Performance Nonvolatile Memory Device Applications
- Low Power Operation of Non-volatile Hafnium Oxide Resistive Memory
- Effect of nano-grain on the memory characteristics of high-κ HfAlO charge trapping layers for nano-scale non-volatile memory device applications
- Nanocrystal floating gate memory devices using atomic layer deposited TiN/Al_2O_3 nanolaminate layers
- High-κ HfO_2/Al_2O_3 nanolaminated charge trapping layers for high performance flash memory device applications
- Very low voltage operation of p-Si/Al_2O_3/HfO_2/TiO_2/Al_2O_3/Pt single quantum well flash memory devices with good retention
- Observation of V Defects in Multiple InGaN/GaN Quantum Well Layers
- HfO2/HfAlO/HfO2 Nanolaminate Charge Trapping Layers for High-Performance Nonvolatile Memory Device Applications
- Nanoscale Multigate TiN Metal Nanocrystal Memory Using High-$k$ Blocking Dielectric and High-Work-Function Gate Electrode Integrated on Silcon-on-Insulator Substrate
- Using Spike-Anneal to Reduce Interfacial Layer Thickness and Leakage Current in Metal–Oxide–Semiconductor Devices with TaN/Atomic Layer Deposition-Grown HfAlO/Chemical Oxide/Si Structure
- TiO2 Nanocrystal Prepared by Atomic-Layer-Deposition System for Non-Volatile Memory Application
- Low-Power Switching of Nonvolatile Resistive Memory Using Hafnium Oxide
- Microstructures Variations of Sn-9Zn-1Al and Sn-8Zn-3Bi Solder Pastes with Sn-3.8Ag-0.7Cu Solder Balls on OSP PCBs after Thermal Cycling Test