Microstructural evolution of MIM capacitor prepared by ALD system at elevated temperature
スポンサーリンク
概要
- 論文の詳細を見る
- 2005-09-13
著者
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Tsai M-j
Electronics And Optoelectronics Research Laboratories Industrial Technology Research Institute
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Li H.
Electronics And Optoelectronics Research Laboratories Industrial Technology Research Institute
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Tzeng P.
Electronics And Optoelectronics Research Laboratories Industrial Technology Research Institute
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LEE L.
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute
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LIN C.
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute
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LO S.
Material Research Laboratories, Industrial Technology Research Institute
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WANG C.
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute
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LIANG C.
Electronics Research and Service Organization, Industrial Technology Research Institute
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LO W.
Electronics Research and Service Organization, Industrial Technology Research Institute
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CHOU Y.
Material Research Laboratory, Industrial Technology Research Institute
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Lin C.
Electronics And Optoelectronics Research Laboratories Industrial Technology Research Institute
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Lo S.
Material Research Laboratories Industrial Technology Research Institute
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Lo W.
Electronics Research And Service Organization Industrial Technology Research Institute
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Wang C.
Electronics And Opto-electronics Research Laboratories Industrial Technology Research Institute
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Liang C.
Electronics Research And Service Organization Industrial Technology Research Institute
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Chou Y.
Material Research Laboratory Industrial Technology Research Institute
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Lee L.
Electronics And Optoelectronics Research Laboratories Industrial Technology Research Institute
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- Very low voltage operation of p-Si/Al_2O_3/HfO_2/TiO_2/Al_2O_3/Pt single quantum well flash memory devices with good retention
- Microstructural Evolution of Metal–Insulator–Metal Capacitor Prepared by Atomic-Layer-Deposition System at Elevated Temperature