LEE L. | Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute
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概要
- LEE L. S.の詳細を見る
- 同名の論文著者
- Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Instituteの論文著者
関連著者
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Tsai M-j
Electronics And Optoelectronics Research Laboratories Industrial Technology Research Institute
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Tzeng P.
Electronics And Optoelectronics Research Laboratories Industrial Technology Research Institute
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LEE L.
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute
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Lee L.
Electronics And Optoelectronics Research Laboratories Industrial Technology Research Institute
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Li H.
Electronics And Optoelectronics Research Laboratories Industrial Technology Research Institute
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TSAI M.-J.
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute
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LIN C.
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute
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Maikap S.
Department Of Electronic Engineering Chang Gung University
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Lin C.
Electronics And Optoelectronics Research Laboratories Industrial Technology Research Institute
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WANG T.-Y.
Department of Material Science Engineering, National Taiwan University
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YANG J.-R.
Department of Material Science Engineering, National Taiwan University
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LEE H.
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute
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Yang J.-r.
Department Of Material Science Engineering National Taiwan University
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Wang T.-y.
Department Of Material Science Engineering National Taiwan University
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MAIKAP S.
Department of Electronic Engineering, Chang Gung University
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WANG C.
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute
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Maikap S.
Department Of Electrical Engineering And Graduate Institute Of Electronic Engineering Ntu
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Wang C.
Electronics And Opto-electronics Research Laboratories Industrial Technology Research Institute
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LO S.
Material Research Laboratories, Industrial Technology Research Institute
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MAIKAP S.
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute
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Lo S.
Material Research Laboratories Industrial Technology Research Institute
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Wang T.
Department Of Orthopaedic Surgery The Affiliated Hospital Of Medical College Of Qingdao University
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PANDA D.
Department of Electronic Engineering, Chang Gung University
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YANG J.
Department of Material Science Engineering, National Taiwan University
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KAO M.-J.
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute
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TSENG S.
Department of Electrical Engineering, National Central University
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LI P.
Department of Electrical Engineering, National Central University
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LIANG C.
Electronics Research and Service Organization, Industrial Technology Research Institute
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LO W.
Electronics Research and Service Organization, Industrial Technology Research Institute
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CHOU Y.
Material Research Laboratory, Industrial Technology Research Institute
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Kao M.-j.
Electronics And Optoelectronics Research Laboratories Industrial Technology Research Institute
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Panda D.
Department Of Electronic Engineering Chang Gung University
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Lo W.
Electronics Research And Service Organization Industrial Technology Research Institute
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Liang C.
Electronics Research And Service Organization Industrial Technology Research Institute
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Chou Y.
Material Research Laboratory Industrial Technology Research Institute
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Wang T.
Department Of Chemistry Soochow University
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Tseng S.
Department Of Electrical Engineering National Central University
著作論文
- TiO_2 nanocrystal prepared by ALD system at elevated temperature
- Microstructural evolution of MIM capacitor prepared by ALD system at elevated temperature
- Effect of nano-grain on the memory characteristics of high-κ HfAlO charge trapping layers for nano-scale non-volatile memory device applications
- Nanocrystal floating gate memory devices using atomic layer deposited TiN/Al_2O_3 nanolaminate layers
- High-κ HfO_2/Al_2O_3 nanolaminated charge trapping layers for high performance flash memory device applications
- Very low voltage operation of p-Si/Al_2O_3/HfO_2/TiO_2/Al_2O_3/Pt single quantum well flash memory devices with good retention