Effect of nano-grain on the memory characteristics of high-κ HfAlO charge trapping layers for nano-scale non-volatile memory device applications
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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Tsai M-j
Electronics And Optoelectronics Research Laboratories Industrial Technology Research Institute
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Tzeng P.
Electronics And Optoelectronics Research Laboratories Industrial Technology Research Institute
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WANG T.-Y.
Department of Material Science Engineering, National Taiwan University
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MAIKAP S.
Department of Electronic Engineering, Chang Gung University
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PANDA D.
Department of Electronic Engineering, Chang Gung University
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LEE L.
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute
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TSAI M.-J.
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute
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YANG J.-R.
Department of Material Science Engineering, National Taiwan University
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Maikap S.
Department Of Electronic Engineering Chang Gung University
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Maikap S.
Department Of Electrical Engineering And Graduate Institute Of Electronic Engineering Ntu
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Yang J.-r.
Department Of Material Science Engineering National Taiwan University
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Wang T.-y.
Department Of Material Science Engineering National Taiwan University
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Panda D.
Department Of Electronic Engineering Chang Gung University
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Lee L.
Electronics And Optoelectronics Research Laboratories Industrial Technology Research Institute
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- Effect of nano-grain on the memory characteristics of high-κ HfAlO charge trapping layers for nano-scale non-volatile memory device applications
- Nanocrystal floating gate memory devices using atomic layer deposited TiN/Al_2O_3 nanolaminate layers
- High-κ HfO_2/Al_2O_3 nanolaminated charge trapping layers for high performance flash memory device applications
- Very low voltage operation of p-Si/Al_2O_3/HfO_2/TiO_2/Al_2O_3/Pt single quantum well flash memory devices with good retention
- Effect of Hf metal predeposition on the electrical properties of HfO_2 films on tensile strained Si_C_ layers
- Microstructural Evolution of Metal–Insulator–Metal Capacitor Prepared by Atomic-Layer-Deposition System at Elevated Temperature