Microstructural Evolution of Metal–Insulator–Metal Capacitor Prepared by Atomic-Layer-Deposition System at Elevated Temperature
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概要
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The rougher surface and raised-hollow holes were observed in the TiN/Al2O3/HfO2/Al2O3/TiN/SiO2/Si multi-stack metal–insulator–metal (MIM) capacitor sample after 1000 °C, 60 s rapid thermal annealing (RTA) process in N2. The surface became rougher partially resulted from the nucleation of TiN layer after RTA. Experimental results also indicated that the oxygen content in the HfO2 was desorbed and the remaining Hf was crystallized. Also, the TiN and Al2O3 layers were intermixed and partially re-crystallized at this high temperature. Very clear morié fringes could be observed in the high-resolution transmission electron microscopy (HR-TEM) micrographs. Also, the energy dispersive spectroscopy (EDS) results indicated that the nitrogen in TiN was desorbed and the TiN was phase transformed to TiO2. This phenomenon might result from the TiN oxidation process during the high-temperature thermal annealing.
- 2006-04-30
著者
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Li H.
Electronics And Optoelectronics Research Laboratories Industrial Technology Research Institute
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Tzeng P.
Electronics And Optoelectronics Research Laboratories Industrial Technology Research Institute
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Lin C.
Electronics And Optoelectronics Research Laboratories Industrial Technology Research Institute
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Lo S.
Material Research Laboratories Industrial Technology Research Institute
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Lo W.
Electronics Research And Service Organization Industrial Technology Research Institute
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Wang C.
Electronics And Opto-electronics Research Laboratories Industrial Technology Research Institute
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Liang C.
Electronics Research And Service Organization Industrial Technology Research Institute
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Lee L.
Electronics And Optoelectronics Research Laboratories Industrial Technology Research Institute
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Lo S.
Material Research Laboratory, Industrial Technology Research Institute, Hsinchu 310, Taiwan
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Lo W.
Electronics Research and Service Organization, Industrial Technology Research Institute, Hsinchu 310, Taiwan
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Chou Y.
Electronics Research and Service Organization, Industrial Technology Research Institute, Hsinchu 310, Taiwan
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Tsai M.
Electronics Research and Service Organization, Industrial Technology Research Institute, Hsinchu 310, Taiwan
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Wang C.
Electronics Research and Service Organization, Industrial Technology Research Institute, Hsinchu 310, Taiwan
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Liang C.
Electronics Research and Service Organization, Industrial Technology Research Institute, Hsinchu 310, Taiwan
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Li H.
Electronics Research and Service Organization, Industrial Technology Research Institute, Hsinchu 310, Taiwan
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Tzeng P.
Electronics Research and Service Organization, Industrial Technology Research Institute, Hsinchu 310, Taiwan
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- Microstructural Evolution of Metal–Insulator–Metal Capacitor Prepared by Atomic-Layer-Deposition System at Elevated Temperature