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Electronics And Optoelectronics Research Laboratories Industrial Technology Research Institute | 論文
- Single-Mode Vertical-Cavity Surface-Emitting Lasers with a Deep-Etched Half-Ring-Shaped Holey Structure
- The Observation of Anomalous Optical Berthelot-type Behaviors in Quaternary AlInGaN Semiconductor Heterosystems
- TiO2 nanocrystal prepared by atomic-layer-deposition system for non-volatile memory application (Special issue: Solid state devices and materials)
- TiO_2 nanocrystal prepared by ALD system at elevated temperature
- Microstructural evolution of MIM capacitor prepared by ALD system at elevated temperature
- HfO_2/HfAlO/HfO_2 Nanolaminate Charge Trapping Layers for High-Performance Nonvolatile Memory Device Applications
- Low-power switching of nonvolatile resistive memory using hafnium oxide (Special issue: Solid state devices and materials)
- Low Power Operation of Non-volatile Hafnium Oxide Resistive Memory
- Effect of nano-grain on the memory characteristics of high-κ HfAlO charge trapping layers for nano-scale non-volatile memory device applications
- Nanocrystal floating gate memory devices using atomic layer deposited TiN/Al_2O_3 nanolaminate layers
- High-κ HfO_2/Al_2O_3 nanolaminated charge trapping layers for high performance flash memory device applications
- Very low voltage operation of p-Si/Al_2O_3/HfO_2/TiO_2/Al_2O_3/Pt single quantum well flash memory devices with good retention
- Observation of V Defects in Multiple InGaN/GaN Quantum Well Layers
- Identification of Generation-Recombination Centers and Traps in Virgin and Fowler-Nordheim Stressed Metal-Oxide-Semiconductor Field-Effect Transistors by Low Temperature Charge Pumping Technique
- HfO2/HfAlO/HfO2 Nanolaminate Charge Trapping Layers for High-Performance Nonvolatile Memory Device Applications
- Microstructural Evolution of Metal–Insulator–Metal Capacitor Prepared by Atomic-Layer-Deposition System at Elevated Temperature
- Nanoscale Multigate TiN Metal Nanocrystal Memory Using High-$k$ Blocking Dielectric and High-Work-Function Gate Electrode Integrated on Silcon-on-Insulator Substrate
- Characteristics of Multileaf Holey Light-Emitting Diodes for Fiber-Optic Communications
- TiO2 Nanocrystal Prepared by Atomic-Layer-Deposition System for Non-Volatile Memory Application
- Anomalous Optical Characteristics of Carrier Transfer Process in Quaternary AlInGaN Multiple Quantum Well Heterostructure