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Electron Devices Division, Electrotechnical Laboratory | 論文
- Effects of Film Quality of Hydrogenated Amorphous Silicon Grown by Thermal Chemical-Vapor-Deposition on Subsequent in-situ Hydrogenation Processes
- Spectroscopic Ellipsometry Studies on Ultrathin Hydrogenated Amorphous Silicon Films Prepared by Thermal Chemical Vapor Deposition
- Spectroscopic Ellipsometry for the Identification of Paracrystallites in the Ultra-Thin Thermal CVD Hydrogenated Amorphous Silicon Films
- Fabrication of 40-150 nm Gate Length Ultrathin n-MOSFETs Using Epitaxial Layer Transfer SOI Wafers
- Fabrication of 40-150nm Gate Length Ultrathin n-MOSFETs Using ELTRAN SOI Wafers
- Optimization of the Body Bias Voltage Set (BBVS) for Flex Power FPGA(Reconfigurable Device and Design Tools,Reconfigurable Systems)
- Preliminary Evaluation of Flex Power FPGA : A Power Reconfigurable Architecture with Fine Granularity(Recornfigurable Systems)(Reconfigurable Systems)
- Experimental and Simulated Results of Room Temperature Single Electron Transistor Formed by Atomic Force Microscopy Nano-Oxidation Process
- Metal-Based Room-Temperature Operating Single Electron Devices Using Scanning Probe Oxidation
- Room Temperature Coulomb Oscillation for Single Electron Transistor on Atomically Flat Ti/α-Al_2O_3 Substrate Made by Pulse-Mode AFM Nano-Oxidation Process
- Single Electron Transistor on Atomically Flat α-Al_2O_3 Substrate Made by AFM Nano-Oxidation Process
- Effects of Optical Confinement in Textured Antireflection Coating using ZnO Films for Solar Cells
- Evaluation of the Si-SiO_2 Interface by the Measurement of the Surface Recombination Velocity S by the Dual-Mercury Probe Method
- A Low-Voltatge Alterable Metal-Oxide-Nitride-Oxide-Semiconductor Memory with Nano-Meter Thick Gate Insulators (NM-MONOS) : LATE NEWS
- Measurement of the Minority-Carrier Lifetime in a Semiconductor Wafer by a Two-Mercury-Probe Method and Its Application to Evaluation of the Surface Recombination Velocity
- Epitaxial Growth of BaTiO_3 Thin Film on SrTiO_3 Substrate in Ultra High Vacuum without Introducing Oxidant : Surfaces, Interfaces, and Films
- Heteroepitaxial Growth of GaP on a Si (100) Substrate by Molecular Beam Epitaxy
- Development of High Quality 1.36 eV Amorphous SiGe:H Alloy by RF Glow Discharge under Helium Dilution