Development of High Quality 1.36 eV Amorphous SiGe:H Alloy by RF Glow Discharge under Helium Dilution

概要

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The use of 1.35 eV amorphous silicon-germanium (a-SiGe:H) alloy as the second/third intrinsic layer along with 1.85 eV front layer in double/triple tandem solar cells is believed to be the best combination for the maximum power output for multijunction cells. In this study high quality low-band-gap (1.36 eV) a-SiGe:H alloy has been developed by RF glow discharge optimizing the deposition parameters and helium dilution of source gases. It has been observed that the structural, electronic properties and defect densities of alloy films developed under the deposition condition which is the transition from low-discharge-power to high-discharge-power regime, become optimum. In the present case this deposition condition is a combination of chamber pressure 0.8 Torr and RF power 60 mW/cm^2. The properties of the alloy films developed under helium dilution improve and defect density decreases with the increase of deposition rate up to 120 Å/min. The 1.36 eV alloy film prepared under this condition has very low defect density (3.2×10^<16> cm^<-3>eV^<-1>). The analysis of spectral response of Pd/a-SiGe:H Schottky barrier solar cells reveals that the hole transport properties improve due to increase of RF power from 15 to 60 mW/cm^2 and also due to increase of growth rate from 51 to 120 Å/min.
社団法人応用物理学会の論文
1995-11-15