Optoelectronic and Structural Properties of Undoped Microcrystalline Silicon Thin Films: Dependence on Substrate Temperature in Very High Frequency Plasma Enhanced Chemical Vapor Deposition Technique
スポンサーリンク
概要
- 論文の詳細を見る
The effects of substrate temperature on optoelectronic and structural properties of undoped microcrystalline silicon thin films have been investigated. The undoped silicon films have been deposited by the very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) technique using a SiH4 and H2 gas mixture at 105 MHz plasma excitation frequency and moderately low power density of 70 mW/cm2. The effect of the systematic variation of substrate temperature (from 180°C to 370°C) on film properties has been studied, while keeping the other parameters constant. The deposition rate is considerably high (2.6 Ås-1) at 180°C and remains almost constant over the whole temperature range. Dark conductivity for all the films lies around ${\sim}10^{-6}$ Scm-1. Low subband gap absorption has been observed by photothermal deflection spectroscopy for these microcrystalline films. Increase of substrate temperature improves the microcrystallinity of the film, which is confirmed from structural studies. Crystalline grain size also increases with increase of substrate temperature and a maximum of 460 Å has been achieved at 370°C. A satisfactory correlation is observed among the results of different structural studies: Raman spectroscopy, infrared spectroscopy, X-ray diffraction, transmission electron microscopy and atomic force microscopy.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-06-15
著者
-
Das Chandan
Energy Research Unit Indian Association For The Cultivation Of Science
-
Ray Swati
Energy Research Unit Indian Association For The Cultivation Of Science
-
Jana Tapati
Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India
-
Das Chandan
Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India
-
Ray Swati
Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India
関連論文
- Influence of Chamber Pressure on Hydrogen Bonding Configurations in a-SiGe:H Films Prepared by Photo-CVD
- Photovoltaic Application of Nanomorph Silicon Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition
- Diamond-Like Carbon Films Prepared by Photochemical Vapour Deposition
- Role of Substrate Tenlperature on the Properties of Microcrystalline Silicon Thin Films : Semiconductors
- Development of High Quality 1.36 eV Amorphous SiGe:H Alloy by RF Glow Discharge under Helium Dilution
- Study of Medium-Range Order and Defects in Hydrogenated Protocrystalline Silicon Films Deposited by Radio Frequency Plasma Enhanced Chemical Vapor Deposition
- Comparison of Electrical, Optical, and Structural Properties of RF-Sputtered ZnO Thin Films Deposited Under Different Gas Ambients
- Use of Multilayer Oxide Films Prepared by RF-Magnetron Sputtering as Transparent IR-Reflector
- Optoelectronic and Structural Properties of Undoped Microcrystalline Silicon Thin Films: Dependence on Substrate Temperature in Very High Frequency Plasma Enhanced Chemical Vapor Deposition Technique
- Phosphorus Doping and Photoinduced Changes in Hydrogenated Amorphous Silicon-Carbon Alloy Films