Influence of Chamber Pressure on Hydrogen Bonding Configurations in a-SiGe:H Films Prepared by Photo-CVD
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-11-20
著者
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Ganguly G
Electrotechnical Lab. Ibaraki Jpn
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Ganguly Gautam
Energy Research Unit Indian Association For The Cultivation Of Science
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Ray S
Indian Assoc. Cultivation Of Sci. Kolkata Ind
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DE Abhijit
Energy Research Unit, Indian Association for the Cultivation of Science
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RAY Swati
Energy Research Unit, Indian Association for the Cultivation of Science
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BARUA A.
Energy Research Unit, Indian Association for the Cultivation of Science
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BANDYOPADHYAY A.
Indian Association for the Cultivation of Science
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Barua A
Indian Assoc. Cultivation Of Sci. Kolkata Ind
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Ray Swati
Energy Research Unit Indian Association For The Cultivation Of Science
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De Abhijit
Energy Research Unit Indian Association For The Cultivation Of Science
関連論文
- Influence of Chamber Pressure on Hydrogen Bonding Configurations in a-SiGe:H Films Prepared by Photo-CVD
- Influence of Chamber Pressure on Optoelectronic and Structural Properties of Boron-Doped Hydrogenated Silicon Films Prepared by RF Magnetron Sputtering
- Efficient Boron Incorporation in Hydrogenated Amorphous Silicon Films by a Novel Combination of RF Glow Discharge Technique and Heated Filament
- Effect of Light Soaking Temperature on the Metastable Defect Distribution in Magnetron Sputtered Hydrogenated Amorphous Silicon Films
- The Effect of Mesh Bias and Substrate Bias on the Properties of a-Si:H Deposited by Triode Plasma Chemical Vapour Deposition
- The Growth of Crystallinity in Undoped SiO:H Films at Low RF-Power Density and Substrate Temperature : Semiconductors
- Photovoltaic Application of Nanomorph Silicon Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition
- Diamond-Like Carbon Films Prepared by Photochemical Vapour Deposition
- Role of Substrate Tenlperature on the Properties of Microcrystalline Silicon Thin Films : Semiconductors
- Development of High Quality 1.36 eV Amorphous SiGe:H Alloy by RF Glow Discharge under Helium Dilution
- Optoelectronic and Structural Properties of Good Quality Hydrogenated Amorphous Silicon Carbide Films Deposited by Hot Wire Assisted RF Plasma Deposition Technique
- Study of Medium-Range Order and Defects in Hydrogenated Protocrystalline Silicon Films Deposited by Radio Frequency Plasma Enhanced Chemical Vapor Deposition
- Comparison of Electrical, Optical, and Structural Properties of RF-Sputtered ZnO Thin Films Deposited Under Different Gas Ambients
- Use of Multilayer Oxide Films Prepared by RF-Magnetron Sputtering as Transparent IR-Reflector
- Optoelectronic and Structural Properties of Undoped Microcrystalline Silicon Thin Films: Dependence on Substrate Temperature in Very High Frequency Plasma Enhanced Chemical Vapor Deposition Technique
- Effect of Deposition Temperature on the Properties of Magnetron Sputtered Hydrogenated Amorphous Silicon Films
- Phosphorus Doping and Photoinduced Changes in Hydrogenated Amorphous Silicon-Carbon Alloy Films