The Growth of Crystallinity in Undoped SiO:H Films at Low RF-Power Density and Substrate Temperature : Semiconductors
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概要
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Microcrystalline SiO:H films have been prepared by the usual RF plasma enhanced chemical vapor deposition (PECVD) method (13.56 MHz) at low rf-power density and substrate temperature which are essential for the fabrication of a-Si solar cell. The transition from amorphous to microcrystalline structure of SiO:H film has been shown to depend sensitively on hydrogen dilution and rf-power density. In the amorphous state, concentration of CO_2 in the source gas mixture plays crucial role in determining optical gap whereas hydrogen dilution and rf-power density play important role in determining the characteristics of the microcrystalline SiO:H films.
- 社団法人応用物理学会の論文
- 2001-02-01
著者
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SARKER Arindam
Energy Research Unit, Indian Association for the Cultivation of Science
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BARUA Asok
Energy Research Unit, Indian Association for the Cultivation of Science
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BANDYOPADHYAY A.
Indian Association for the Cultivation of Science
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Barua A
Indian Assoc. Cultivation Of Sci. Kolkata Ind
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Barua Asok
Energy Research Unit Indian Association For The Cultivation Of Science
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Sarker Arindam
Energy Research Unit Indian Association For The Cultivation Of Science
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BANDYOPADHYAY Ashok
Energy Research Unit, Indian Association for the Cultivation of Science
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Bandyopadhyay Ashok
Energy Research Unit Indian Association For The Cultivation Of Science
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