Control of Crystallization at Low Thickness in μc-Si:H Films Using Layer-by-Layer Growth Scheme
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概要
- 論文の詳細を見る
Hydrogen plasma treatment of stacking layers in a layer-by-layer (LBL) growth scheme effectively modulates the network structure from the surface into the bulk through the growth zone by abstraction of hydrogen from the Si:H matrix. It is an efficient way of reducing the microcrystalline transition layer so that virtual saturation of the crystallization may be obtained at a significantly low thickness of the sample compared to that obtained by a continuous mode of deposition. The growth of a highly conducting undoped μc-Si:H film at a stacked layer thickness of 〜650Å is described. The film has a dark conductivity, σ_D, of 〜4×10^<-3> S・cm^<-1> and exhibits a very high crystallinity, as determined by Raman scattering and transmission electron microscope studies.
- 社団法人応用物理学会の論文
- 1999-10-01
著者
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BARUA Asok
Energy Research Unit, Indian Association for the Cultivation of Science
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Barua Asok
Energy Research Unit Indian Association For The Cultivation Of Science
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Kshirsagar S.
Energy Research Unit Indian Association For The Cultivation Of Science
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DAS Debajyoti
Energy Research Unit, Indian Association for the Cultivation of Science
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JANA Madhusudan
Energy Research Unit, Indian Association for the Cultivation of Science
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Das Debajyoti
Energy Research Unit Indian Association For The Cultivation Of Science
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Jana Madhusudan
Energy Research Unit Indian Association For The Cultivation Of Science
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Kshirsagar S.T.
Energy Research Unit, Indian Association for the Cultivation of Science
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