Lowering of Thickness of N-Type Microcrystalline Hydrogenated Silicon Film by Seeding Technique
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概要
- 論文の詳細を見る
By using a seeding technique it has been possible to lower significantly the thickness of n-type μc-Si:H film having acceptable dark conductivity for use at the tunnel junction/s of multijunction a-Si solar cells. The μc-Si:H films have been prepared by radio frequency plasma enhanced chemical vapor deposition (RFPECVD) method (13.56 MHz) at low power and substrate temperature suitable for the fabrication of a-Si solar cells. The seed layer used is an ultrathin layer of undoped μc-Si:H film which facilitates the growth of microcrystallinity in n-μc-Si:H film. The positive effect of seed layer in the growth of microcrystallinity of n-μ-Si:H film has been established by the study of dark conductivity and transmission electron microscope (TEM) of films prepared under different deposition conditions.
- 社団法人応用物理学会の論文
- 1999-09-15
著者
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Barua Asok
Energy Research Unit Indian Association For The Cultivation Of Science
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K. Barua
Energy Research Unit Indian Association For The Cultivation Of Science
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Manda Sankar
Energy Research Unit Indian Association For The Cultivation Of Science
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Mandal Sankar
Energy Research Unit, Indian Association for the Cultivation of Science
関連論文
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- Development of High Quality P-Type Hydrogenated Amorphous Silicon Oxide Film and Its Use in Improving the Performance of Single Junction Amorphous Silicon Solar Cells
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