Highly Conducting Undoped μc-SiO:H Films Prepared by RF Glow Discharge
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概要
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Highly conducting undoped μc-SiO:H film of σ_D=3×10^<-2> S・cm^<-1>, ΔE=0.14 eV and σ_<Ph>=8×10^<-3> S・cm^<-1> was obtained from high H_2-diluted plasma at a moderately high RF power and substrate temperature (T_s) by the plasma enhanced chemical vapour deposition (PECVD) process. At higher T_s and in improved μc-networks H-content reduced, however, O-incorporation increased. Crystallinity of the films was identified by Raman scattering and transmission electron microscope (TEM) studies. Sharp crystallographic rings in the electron diffraction pattern identified (111), (220), (311) planes of c-Si and the TEM micrograph exhibited a uniform and dense distribution of crystallites with a range of diameters from 50-200Å.
- 社団法人応用物理学会の論文
- 1999-07-01
著者
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BARUA Asok
Energy Research Unit, Indian Association for the Cultivation of Science
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Barua Asok
Energy Research Unit Indian Association For The Cultivation Of Science
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DAS Debajyoti
Energy Research Unit, Indian Association for the Cultivation of Science
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Das Debajyoti
Energy Research Unit Indian Association For The Cultivation Of Science
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