Wide Band Gap Si:H at Low H-Content Prepared by Interrupted Grown and H-Plasma Treatment

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概要

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• Alternating the deposition of thin layers of a-Si:H at 100℃ and exposure to r.f. H-plasma periodically, an widening of optical band gap by 20% along with the reduction in hydrogen content by 80% was observed in stacked layers. Interrupted growth and H-plasma treatment has been established as an effective technique for the elimination of hydrogen from Si:H network, however, simultaneous widening of optical band gap appears to be an interesting feature related to Nano-crystallization and quantum size effect in hydrogenated binary alloy.

• 社団法人応用物理学会の論文
• 1994-04-15

著者

• Das Debajyoti

  Energy Research Unit Indian Association For The Cultivation Of Science

関連論文

• Highly Conducting Undoped μc-SiO:H Films Prepared by RF Glow Discharge
• Control of Crystallization at Low Thickness in μc-Si:H Films Using Layer-by-Layer Growth Scheme
• Wide Band Gap Si:H at Low H-Content Prepared by Interrupted Grown and H-Plasma Treatment
• Correlation of Electrical, Thermal and Structural Properties of Microcrystalline Silicon Thin Films : Semiconductors
• Effect of Deposition Temperature on the Properties of Magnetron Sputtered Hydrogenated Amorphous Silicon Films

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