Influence of Chamber Pressure on Optoelectronic and Structural Properties of Boron-Doped Hydrogenated Silicon Films Prepared by RF Magnetron Sputtering
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-05-15
著者
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Sharma S
Indian Assoc. Cultivation Sci. Calcutta Ind
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Banerjee R
Indian Assoc. Cultivation Sci. Calcutta Ind
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Banerjee Ratnabali
Energy Research Unit Indian Association For The Cultivation Of Science
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BARUA A.
Energy Research Unit, Indian Association for the Cultivation of Science
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Das Debabrata
Energy Research Unit, Indian Association for the Cultivation of Science
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SHARMA S.
Energy Research Unit, Indian Association for the Cultivation of Science
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BANERJEE D.
Department of Solid State Physics, Indian Association for the Cultivation of Science
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BANDYOPADHYAY A.
Indian Association for the Cultivation of Science
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Barua A
Indian Assoc. Cultivation Of Sci. Kolkata Ind
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Das Debabrata
Energy Research Unit Indian Association For The Cultivation Of Science
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Banerjee D.
Department Of Solid State Physics Indian Association For The Cultivation Of Science
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Banerjee D.
Department Of Physics Calcutta University Science College
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Sharma S.N.
Energy Research Unit, Indian Association for the Cultivation of Science
関連論文
- Electronic and Structural Characterisation of Boron-Doped Hydrogenated Silicon Thin and Ultrathin Films Prepared by RF Magnetron Sputtering
- Influence of Chamber Pressure on Hydrogen Bonding Configurations in a-SiGe:H Films Prepared by Photo-CVD
- Influence of Chamber Pressure on Optoelectronic and Structural Properties of Boron-Doped Hydrogenated Silicon Films Prepared by RF Magnetron Sputtering
- Efficient Boron Incorporation in Hydrogenated Amorphous Silicon Films by a Novel Combination of RF Glow Discharge Technique and Heated Filament
- Effect of Light Soaking Temperature on the Metastable Defect Distribution in Magnetron Sputtered Hydrogenated Amorphous Silicon Films
- The Growth of Crystallinity in Undoped SiO:H Films at Low RF-Power Density and Substrate Temperature : Semiconductors
- Optoelectronic and Structural Properties of Good Quality Hydrogenated Amorphous Silicon Carbide Films Deposited by Hot Wire Assisted RF Plasma Deposition Technique
- On Seniority Quantum Number
- Effect of Deposition Temperature on the Properties of Magnetron Sputtered Hydrogenated Amorphous Silicon Films
- Phosphorus Doping and Photoinduced Changes in Hydrogenated Amorphous Silicon-Carbon Alloy Films