Electronic and Structural Characterisation of Boron-Doped Hydrogenated Silicon Thin and Ultrathin Films Prepared by RF Magnetron Sputtering
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-01-15
著者
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Sharma S
Indian Assoc. Cultivation Sci. Calcutta Ind
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Banerjee R
Indian Assoc. Cultivation Sci. Calcutta Ind
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Banerjee Ratnabali
Energy Research Unit Indian Association For The Cultivation Of Science
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Banerjee D
Indian Assoc. Cultivation Sci. Calcutta Ind
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SHARMA Shailesh
Energy Research Unit, Indian Association for the Cultivation of Science
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BOSE Subhasis
Energy Research Unit, Indian Association for the Cultivation of Science
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BATABYAL Ajit
Energy Research Unit, Indian Association for the Cultivation of Science
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BANERJEE Dipali
Department of Solid State Physics, Indian Association for the Cultivation of Science
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BHATTACHARYA Ramen
Department of Solid State Physics, Indian Association for the Cultivation of Science
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Batabyal A
Energy Research Unit Indian Association For The Cultivation Of Science
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Bose Subhasis
Energy Research Unit Indian Association For The Cultivation Of Science
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Sharma Shailesh
Energy Research Unit Indian Association For The Cultivation Of Science
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Bhattacharya Ramen
Department Of Solid State Physics Indian Association For The Cultivation Of Science
関連論文
- Electronic and Structural Characterisation of Boron-Doped Hydrogenated Silicon Thin and Ultrathin Films Prepared by RF Magnetron Sputtering
- Influence of Chamber Pressure on Optoelectronic and Structural Properties of Boron-Doped Hydrogenated Silicon Films Prepared by RF Magnetron Sputtering
- Efficient Boron Incorporation in Hydrogenated Amorphous Silicon Films by a Novel Combination of RF Glow Discharge Technique and Heated Filament
- Effect of Deposition Temperature on the Properties of Magnetron Sputtered Hydrogenated Amorphous Silicon Films