Photovoltaic Application of Nanomorph Silicon Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition
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概要
- 論文の詳細を見る
Nanomorph silicon (nanoa-Si) thin films have been developed from the SiH_4/H_2 plasma in high plasma power regime of plasma enhanced chemical vapor deposition (PECVD). Dark and photoconductivity of nanoa-Si films are of the order of 10^<-12> S・cm^<-1> and 10^<-6> S・cm^<-1> respectively. The average size of nanocrystallites, embedded in the amorphous matrix, is 〜10 nm. Optical gap of such films is ≥ 1.80 eV. The photoluminescence has been observed with a wide peak around 1.6 eV. Unlike nanocrystalline silicon, these films are photosensitive. This nanoa-Si thin film may be a good alternative to common wide bandgap a-SiC:H which is an active layer of the top cell of multijunction solar cell.
- 社団法人応用物理学会の論文
- 1999-05-01
著者
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RAY Swati
Energy Research Unit, Indian Association for the Cultivation of Science
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Ray Swati
Energy Research Unit Indian Association For The Cultivation Of Science
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Hazra Sukti
Energy Research Unit Indian Association For The Cultivation Of Science
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