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Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist) | 論文
- Synthesis and Surface Acoustic Wave Property of Aluminum Nitride Thin Films Fabricated on Silicon and Diamond Substrates Using the Sputtering Method : Surfaces, Interfaces, and Films
- Atomic Topography Change of SiO_2/Si Interfaces during Thermal Oxidation : Semiconductors
- SiO_2 Surface and SiO_2/Si Interface Topography Change by Thermal Oxidation : Semiconductors
- Selective Growth of Buried n^+ Diamond on (001) Phosphorus-Doped n-Type Diamond Film
- Nanometer Scale Height Standard Using Atomically Controlled Diamond Surface
- Exciton-derived Electron Emission from (001) Diamond p-n Junction Diodes with Negative Electron Affinity
- High-Efficiency Excitonic Emission with Deep-Ultraviolet Light from (001)-Oriented Diamond p-i-n Junction
- Selective Growth of Monoatomic Cu Rows at Step Edges on Si(111) Substrates in Ultralow-Dissolved-Oxygen Water
- Nonuniformity in Ultrathin SiO_2 on Si(111) Characterized by Conductive Atomic Force Microscopy
- Selective Growth of Cu Nanowires on Si(111) Substrates
- In Situ Measurements of Drastic Change of Electrical Conductivity and Structure upon Electrochemical Lithium Intercalation in Pyrolyzed Poly(hydrazocarbonyl-1-4-phenylenecarbonyl) Film
- Well Structure by High-Energy Boron Implantation for Soft-Error Reduction in Dynamic Random Access Memories (DRAMs)
- Estimation of Carrier Suppression by High-Energy Boron-Implanted Layer for Soft Error Reduction
- High-Dose Implantation of MeV Carbon Ion into Silicon
- Au^+-Ion-Implanted Silica Glass with Non-Linear Optical Property
- Microbeam Line of MeV Heavy Ions for Materials Modification and In-Situ Analysis : Beam-Induced Physics and Chemistry
- Microbeam Line of MeV Heavy Ions for Materials Modification and In-Situ Analysis
- Preferentially Oriented Crystal Growth in Dynamic Mixing Process : An Approach by Monte Carlo Simulation
- Focused High-Energy Heavy Ion Beams
- Electron-Beam-Induced Selective Thermal Decomposition of Ultrathin SiO_2 Layers Used in Nanofabrication