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Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist) | 論文
- Qualitative Correspondences of Experimentally Obtained Growth Rates and Morphology of Single-Crystal Diamond with Numerical Predictions of Plasma and Gas Dynamics in Microwave Discharges for Various Substrate Holder Shapes
- 23-O-16 Hardness of DLC Deposited by Plasma Based Ion Implantation and Deposition Method Using Mixed RF and Negative High Voltage Pulses
- Fe Deposition or Implantation into Vacuum Arc Deposited Cr Films
- Ion-Beam 3C-SiC Heteroepitaxy on Si
- Neutron Activation Analysis of Ultrahigh-Purity Ti-Al Alloys in Comparison with Glow-Discharge Mass Spectrometry
- Epitaxial Growth of Pure ^Si Thin Films Using Isotopically Purified Ion Beams : Semiconductors
- Neutron Activation Analysis of High-Purity Iron in Comparison with Chemical Analysis
- Silicon Carbide Film Growth Using Dual Isotopical ^Si^- and ^C^+ Ion species
- Formation of High Purity films by Negative Ion Beam Sputtering Using an Ultra-high Vacuum Self-Sputtering Method
- Formation of Ultra High Pure Metal Thin Films by Means of a Dry Process
- Macroparticle-Free Ti-Al Films by Newly Developed Coaxial Vacuum Arc Deposition
- Formation of Crystalline SiC Buried Layer by High-Dose Implantation of MeV Carbon Ions at High Temperature
- n-Type Control by Sulfur Ion Implantation in Homoepitaxial Diamond Films Grown by Chemical Vapor Deposition
- High-Quality B-Doped Homoepitaxial Diamond Films using Trimethylboron
- Influence of Biased Electrode on Plasma Confinement in the Tohoku University Heliac
- Particle Transport Study with an Electron Beam in the Tohoku University Heliac
- Potential Structure Measurements of ECH Plasma in a Helical Axis Stellarator
- Fabrication of Defect-Free Sub-10nm Si Nanocolumn for Quantum Effect Devices Using Cl Neutral Beam Process
- Annealing of Se^+-Implanted GaAs Encapsulated with As-Doped a-Si:H
- Analysis of Leading Edge/Trailing Edge Independent Detection Method in Optical Disk : High Density Recording