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Department of Physics,Gakushuin University | 論文
- Anomalous Magnetoresistance in Perpendicular Magnetic Fields Observed in High Mobility GaAs/Al_xGa_As Interfaces
- Activation Energies of the 1/3 and 2/3 Fractional Quantum Hall Effect in GaAs/Al_xGa_As Heterostructures
- Negative Magnetoresistance and Inelastic Scattering Time in Two-Dimensional Electron Systems in GaAs/Al_xGa_As Heterojunction Interfaces
- Electron Concentration and Mobility Dependence of Breakdown of the Quantum Hall Effect
- Determination of the Fine Structure Constant Based on the Quantum Hall Effect
- Quantized Hall Resistivity in Si-MOSFETs Measured at Liq.^3He Temperatures
- Mossbauer Effect in Mn_xFe_O_4
- A Mossbauer Study of Fe^ in Distorting Spinels
- Primary Retroperitoneal Teratoma in an Adult: A Case Report
- Effect of Residual Stress on Hole Mobility of SOS MOS Devices
- Malignant fibrous histiocytoma of the spermatic cord: A case report
- Influence of Crystalline Defects and Residual Stress on the Electrical Characteristics of SOS MOS Devices
- Interaction Effects in Multi-Subband Quantum Wires
- Hall Effect in Silicon MOS Inversion Layers under Strong Magnetic Fields
- 29p-BPS-25 Electron Stimulated Desorption of Metastable Atoms from Solid Ne
- Anelasticity in an Mn-Ferrite Single Crystal
- Experiments on the Critical Exponent of Localization in Landau Subbands with the Landau Quantum Numbers 0 and 1 in Si-MOS Inversion Layers
- Experimental Correlation between Diagonal and Hall Conductivities of Silicon MOS inversion Layers in Strong Magnetic Fields
- Second Activation Energy in the Fractional Quantum Hall Effect
- Experiments on Scaling Relation of Conductivities in Silicon MOS Inversion Layers in Strong Magnetic Fields