スポンサーリンク
Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan | 論文
- Interfacial Dipole at High-$k$ Dielectric/SiO2 Interface: X-ray Photoelectron Spectroscopy Characteristics
- Isotope Tracing Study of GeO Desorption Mechanism from GeO2/Ge Stack Using 73Ge and 18O
- Junctionless Ge p-Channel Metal--Oxide--Semiconductor Field-Effect Transistors Fabricated on Ultrathin Ge-on-Insulator Substrate
- Cell-Driven Three-Dimensional Manipulation of Microparts for a Microassembly
- Live-Cell-Driven Insertion of a Nanoneedle
- High Quality Factor Graphene Resonator Fabrication Using Resist Shrinkage-Induced Strain
- Higher-k Scalability and Leakage Current Reduction of SiO2-Doped HfO2 in Direct Tunneling Regime
- Experimental and Analytical Characterization of Dual-Gated Germanium Junctionless p-Channel Metal--Oxide--Semiconductor Field-Effect Transistors
- Counter Dipole Layer Formation in Multilayer High-k Gate Stacks
- Ultra-Conformal Metal Coating on High-Aspect-Ratio Three-Dimensional Structures Using Supercritical Fluid: Controlled Selectivity/Non-Selectivity
- Kinetic Effects of O-Vacancy Generated by GeO2/Ge Interfacial Reaction
- Cavity Ring-Down Spectroscopy Measurement of H(n=2) Density in Mesoplasma for Fast-Rate Silicon Epitaxy
- Diameter Dependence of Sub-Terahertz AC Response of Metallic Carbon Nanotubes with a Single Atomic Vacancy
- Photo-Assisted Electronic Transport in Impurity-Doped Carbon Nanotubes