Cavity Ring-Down Spectroscopy Measurement of H(n=2) Density in Mesoplasma for Fast-Rate Silicon Epitaxy

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概要

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• The absolute density of the first excited state atomic hydrogen H(n=2) in an Ar/H<inf>2</inf>mixture is measured in-situ by cavity ring-down spectroscopy under mesoplasma condition. The H(n=2) atom density is determined to be in the range of 10^{10}--10^{11} cm^-3and the formation of H(n=2) having such high density is identified to be predominantly due to the associative charge exchange/dissociative recombination reactions, similar to dc-arc plasma expanding into a low-pressure vessel that have been previously reported. The local H(n=2) atom density is found to have a linear variation with deposition rate, which indicates that high H(n=2) atom density have a direct role in the reduction of SiHCl<inf>3</inf>to Si.

• 2013-07-25

著者

• Yoshida Toyonobu

  Department Of Materials Engineering School Of Engineering The University Of Tokyo

• Kambara Makoto

  Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

• Kambara Makoto

  Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

• Wu Sudong

  Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

• Inoue Hisato

  Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

• Yoshida Toyonobu

  Department of Materials Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

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