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Department of Electronics Engineering, National Chiao-Tung University | 論文
- Microcrystalline SiC Films Grown by Electron Cyclotron Resonance Chemical Vapor Deposition at Low Temperatures
- An Integrated CMOS Front-End Receiver with a Frequency Tripler for V-Band Applications
- Very Low Temperature Deposition of Polycrystalline Si Films Fabricated by Hydrogen Dilution with Electron Cyclotron Resonance Chemical Vapor Deposition
- An Integrated CMOS Front-End Receiver with a Frequency Tripler for V-Band Applications
- A Low-Power K-Band CMOS Current-Mode Up-Conversion Mixer Integrated with VCO
- Physical and Barrier Properties of Plasma Enhanced Chemical Vapor Deposition α-SiC : N : H Films
- Effects of O_2- and N_2-Plasma Treatments on Copper Surface
- Physical and Barrier Properties of Plasma-Enhanced Chemical Vapor Deposited α-SiC : H Films from Trimethylsilane and Tetramethylsilane
- Simulation of Positive Oxide Trapped Charge Induced Leakage Current and Read-Disturb in Flash EEPROMs
- Auger Recombination Enhanced Hot Electron Programming in Flash EEPROMs
- Stress Induced Subthreshold Current Hump in Short Gate-Length pMOSFET's with Shallow Trench Isolation
- Temperature Effect on Off-State Drain Leakage Current in a Hot-Carrier Stressed n-MOSFET
- A Comparative Study of Interface Trap Induced Drain Leakage Current in Various n-MOSFET Structures
- n-UV+BLUE/Green/Red White Light Emitting Diode Lamps
- Physical and Barrier Properties of Plasma-Enhanced Chemical Vapor Deposited α-SiCN:H Films with Different Hydrogen Contents
- Growth of In_Ga_P on GaAs by LPE: The influence of Growth Temperature and Lattice Mismatch on Photoluminescence : Condensed Matter
- Monte Carlo Sphere Model for Effective Oxide Thinning Induced Extrinsic Breakdown
- Monte-Carlo Sphere Model for "Effective Oxide Thinning" Induced Extrinsic Breakdown
- Primary analysis of multi pesticide residues in Chinese herbal crude drug material(Residue Analysis in Raw and Processed Commodities,Poster,3) Regulatory Science and Residues)
- Oxide Thickness Dependence of Hot Carrier Stress Induced Drain Leakage Current Degradation in Thin-Oxide n-MOSFET's