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Department of Electronics, Faculty of Technology, Kanazawa University | 論文
- Properties of "Stoichiometric" Silicon Oxynitride Films
- Structural Properties of Ultrathin Amorphous Silicon Oxynitride Layers
- Effects of Plasma-Pretreatment on Substrates before Deposition of Polycrystalline Silicon Films(Surfaces, Interfaces, and Films)
- Influence of Organic Contamination on Silicon Dioxide Integrity
- Effects of Addition of SiF_4 During Growth of Nanocrystalline Silicon Films Deposited at 100℃ by Plasma-Enhanced Chemical Vapor Deposition
- Temperature Effects on the Structure of Polycrystalline Silicon Films by Glow-Discharge Decomposition Using SiH_4/SiF_4
- Effects of Nitrogen Addition to Fluorinated Silicon Dioxide Films
- Initial Growth of Polycrystalline Silicon Films on Substrates Subjected to Different Plasma Treatments
- Effects of the Addition of SiF_4 to the SiH_4 Feed Gas for Depositing Polycrystalline Silicon Films at Low Temperature
- Stress in Amorphous SiO_x:H Films Prepared by Plasma-Enhanced Chemical Vapor Deposition
- Properties of "Stoichiometric" Silicon Oxynitride Films
- Effects of Deposition Temperature on Strain in Polycrystalline SiC Films Deposited by Radio-Frequency Glow Discharge
- Fast and Slow Processes in Light-Induced Electron Spin Resonance in Hydrogenated Amorphous Si-N Films
- Proton Nuclear Magnetic Resonance Studies on Structural Changes Induced by Annealing of Hydrogenated Amorphous Silicon Films Prepared at High Deposition-Rate
- Identification of a New Defect in Silicon Nitride Films
- Thermal Equilibration of Defect Density in Hydrogenated Amorphous Silicon-Germanium Alloys
- Comparison between ESR and CPM for the Gap States in a-Si-Ge:H
- Preparation of Ba-Y-Cu-O Superconducting Films by Laser Ablation with and without Laser Irradiation on Growing Surface : Special Section : Solid State Devices and Materials 2 : Thin Film Devices and Superconductors
- a-Si_O_x:H Films Prepared by Direct Photo-CVD Using CO_2 Gas : Condensed Matter
- Preparation of Ba_2YCu_3O_x Superconducting Films by Laser Evaporation and Rapid Laser Annealing : Electrical Properties of Condensed Matter