スポンサーリンク
Department of Electrical and Electronic Engineering, Toyo University | 論文
- Beating of the Shubnikov-de Haas Oscillations in GaAs/AlGaAs Quantum-Dot Arrays
- Advantages of the Asymmetric Tunnel Barrier for High-Density Integration of Single Electron Devices ( Quantum Dot Structures)
- Single Electron Device with Asymmetric Tunnel Barriers
- A Perspective on Next-Generation Silicon Devices
- Electron Transport Properties in Lightly Si-doped InGaN Films Grown by Metalorganic Vapor Phase Epitaxy
- Electron Mobility in In_Ga_xAs Epitaxial Layer
- Calculations of Energy Levels of Oxygen and Silicon Vacancies at the Si-SiO_2 Interface
- Fabrication of Josephson Weak Links Using Electron Beam Lithography and Ion-Etching, and Proposal of a New Single Flux Quantum Logic : C-2: JOSEPHSON DEVICES
- Interface Analysis of Al_2O_3/InP Structure Prepared by Molecular Beam Deposition
- Fabrication of Step-Edge Junctions on the Concave or Convex Side of YBa_2Cu_3O_ Film
- Magnetic and Electrical Properties of Vacuum-Deposited CdCr_2Se_4 Thin Film
- Studies on Chemically Etched Silicon, Gallium Arsenide, and Gallium Phosphide Surfaces by Auger Electron Spectroscopy
- Ordered Structure and Ion Migration in Silicon Dioxide Films
- Hall Mobility of Electrons in Silicon Surface Inversion Layers
- Galvanomagnetic Effects in Silicon Surface Inversion Layers
- Mobility of Magnetic Domain Wall of Strip Domain in Garnet Crystal : Computer Simulation and Measurement : B-2: BUBBLE DEVICES (II)
- Optical Properties of Vacuum-Deposited CdCr_2Se_4 Thin Film
- Effects of PAs_xN_y Deposition Conditions and the Cd Concentration in the Substrates on the Characteristics of In_Ga_As Metal-Insulator-Semiconductor Field Effect Transistors : Special Section : Solid State Devices and Materials 2 : III-V Comp
- Deep Level Transient Spectroscopy of Bulk Traps and Interface States in Si MOS Diodes
- Epitaxial Growth of SiC Film on Silicon Substrate and Its Crystal Structure